3D field confinement in the near-field interaction between graphene and Si/SiGe axially heterostructured NWs

Interest in the integration of graphene and semiconductor nanowires (NWs) increased dramatically during last two decades along with overwhelming development technology. The possibility combining countless properties singular optical behavior NWs leads way to design unique photonic nanodevices. In this work, response Si/SiGe axially heterostructured deposited over a monolayer is investigated. results demonstrate enhancement Raman signal under influence NW. Moreover, presence an axial heterojunction NW shown locally hinder through full confinement incident electromagnetic field inside body around heterojunction. This complex interaction could be basis for near-field probes molecules or 2D materials, optoelectronic devices including graphene/NW interfaces.